Thermal expansion measurement of pure aluminum using a very low thermal expansion heating stage for x-ray diffraction experiments

Citation
G. Langelaan et S. Saimoto, Thermal expansion measurement of pure aluminum using a very low thermal expansion heating stage for x-ray diffraction experiments, REV SCI INS, 70(8), 1999, pp. 3413-3417
Citations number
10
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
REVIEW OF SCIENTIFIC INSTRUMENTS
ISSN journal
00346748 → ACNP
Volume
70
Issue
8
Year of publication
1999
Pages
3413 - 3417
Database
ISI
SICI code
0034-6748(199908)70:8<3413:TEMOPA>2.0.ZU;2-2
Abstract
Precise lattice parameter measurements for residual stress analysis require s good specimen alignment in the beam path. If these measurements are to be performed at elevated temperatures, then the effects of thermal expansion must be accounted for in the alignment and calibration procedure. During a recent study, residual strains in a metal matrix composite were measured in situ during dynamic temperature cycling. These experiments required a stag e capable of rapid heating and cooling as well as a very low thermal expans ion to minimize the specimen displacement during the cycling. A low expansi on stage, heated with a programmable infrared heater, was developed in whic h the front (irradiated) surface is the reference plane. The thermal expans ion of the stage was measured using a diffraction technique to determine fa lse lattice parameter shifts due to specimen displacement and was found to be less than the measurement limit of the apparatus. With small specimens, the temperature control became difficult and fluctuations of +/- 1.5 degree s C were observed. The temperature dependence of the lattice parameter for pure Al was measured between 30 and 386 degrees C. Very good agreement was obtained with previously published data. Thus a new rapid technique which a llows complete measurement of the lattice thermal expansion in less than 2 h has been demonstrated. This technique can also be applied to measurement of the temperature dependence of residual stresses in complex materials suc h as metallizations for microelectronics and for metal matrix composites. ( C) 1999 American Institute of Physics. [S0034-6748(99)03708-9].