Radiation damaged silicon as a semi-insulating relaxation semiconductor: static electrical properties

From the static current-voltage properties of irradiated silicon p-i-n diod es we develop a semi-quantitative model based on established relaxation sem iconductor theory for forward and reverse bias. The properties of such diod es when used as photodiodes or ionized particle detectors are also describe d and analysed. The basic properties of this semi-insulating, relaxation se miconductor device are described together with possible applications. The s ame behaviour is observed in semi-insulating GaAs and other compound semico nductor diodes so that the analysis is also suitable for them and devices i ncorporating such diodes in substrates, such as MESFETS.