Epitaxial growth of high-quality ZnS films on sapphire and silicon by pulsed laser deposition

Authors
Xin, ZJ Peaty, RJ Rutt, HN Eason, RW
Citation
Zj. Xin et al., Epitaxial growth of high-quality ZnS films on sapphire and silicon by pulsed laser deposition, SEMIC SCI T, 14(8), 1999, pp. 695-698
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
02681242 → ACNP
Volume
14
Issue
8
Year of publication
1999
Pages
695 - 698
Database
ISI
SICI code
0268-1242(199908)14:8<695:EGOHZF>2.0.ZU;2-M
Abstract
We report, for the first time, epitaxial growth of high-quality ZnS films o n sapphire and silicon substrates, using pulsed laser deposition. X-ray dif fraction results show that at all growth temperatures from 200 degrees C to 680 degrees C, epitaxial wurtzite (002) ZnS films have been successfully g rown on(10 (1) over bar 2) sapphire and (001) silicon substrates. X-ray dif fraction data yield full width at half maximum 2 theta values of 0.13 degre es for as-grown samples, compared with 2 theta values of 0.09 degrees and 0 .08 degrees for the bare sapphire and silicon substrates respectively.