Intersubband relaxation lifetimes in p-GaAs/AlGaAs quantum wells below theLO-phonon energy measured in a free electron laser experiment

Authors
Bezant, CD Chamberlain, JM Pellemans, HPM Murdin, BN Batty, W Henini, M
Citation
Cd. Bezant et al., Intersubband relaxation lifetimes in p-GaAs/AlGaAs quantum wells below theLO-phonon energy measured in a free electron laser experiment, SEMIC SCI T, 14(8), 1999, pp. L25-L28
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
02681242 → ACNP
Volume
14
Issue
8
Year of publication
1999
Pages
L25 - L28
Database
ISI
SICI code
0268-1242(199908)14:8<L25:IRLIPQ>2.0.ZU;2-5
Abstract
Lifetimes for the LH1 to HH1 transition in GaAs/AlGaAs quantum wells are me asured by pump and probe spectroscopy using a free electron laser. The ener gy of the LH1 to HI-Il transition is below that of the longitudinal optical phonon. A value of 55 ps is found for a 67 Angstrom wide well at 8 K. Comp arisons with recent measurements for electron systems are presented.