Suppression of parasitic backgating by hydrogenation of ion-doped gallium arsenide structures

Authors
Kagadei, VA Lilenko, YV Shirokova, LS Proskurovskii, DI
Citation
Va. Kagadei et al., Suppression of parasitic backgating by hydrogenation of ion-doped gallium arsenide structures, TECH PHYS L, 25(7), 1999, pp. 522-523
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
25
Issue
7
Year of publication
1999
Pages
522 - 523
Database
ISI
SICI code
1063-7850(199907)25:7<522:SOPBBH>2.0.ZU;2-2
Abstract
It has been established that hydrogenation of ion-doped gallium arsenide st ructures can be used to suppress parasitic backgating. Curves describing th e degree of suppression of the backgating as a function of the hydrogenatio n regimes are given. The observed dependence is evidently caused by the for mation and decay of hydrogen complexes with deep centers. (C) 1999 American Institute of Physics. [S1063-7850(99)00807-1].