Effect of thermal annealing on optical properties of implanted GaAs

GaAs samples doped with indium atoms by ion implantation and thermal anneal ed were studied using a channelling method, Rutherford backscattering, and an ellipsometry. From these measurements it was observed that the layer imp lanted with 3 x 10(16) cm(-2) indium dose was totally damaged and its optic al properties, namely a refraction index n and an extinction coefficient k, corresponded to the amorphous material. Subsequent isobaric heating of the implanted samples resulted in recovery of the crystalline structures with simultaneous change of the n and k index values.