Structure changes in Cz-Si single crystals irradiated with fast oxygen andneon ions

Authors
Datsenko, L Zymierska, D Auleytner, J Klinger, D Machulin, V Klad'ko, V Melnik, V Prokopenko, I Czosnyka, T Choinski, J
Citation
L. Datsenko et al., Structure changes in Cz-Si single crystals irradiated with fast oxygen andneon ions, ACT PHY P A, 96(1), 1999, pp. 137-142
Citations number
12
Categorie Soggetti
Physics
Journal title
ACTA PHYSICA POLONICA A
ISSN journal
05874246 → ACNP
Volume
96
Issue
1
Year of publication
1999
Pages
137 - 142
Database
ISI
SICI code
0587-4246(199907)96:1<137:SCICSC>2.0.ZU;2-4
Abstract
The research of the surface and the near-surface region of Cz-Si wafers irr adiated with fast oxygen and neon ions of energy 4 MeV/u and dose 10(14) pa rticles/cm(2) is presented. In our study several methods based on the Bragg case of X-ray diffraction using Ag K-alpha 1, as well as reflection high-e nergy electron diffraction and Nomarsky optical microscopy were used. It wa s shown that implantation with fast neon ions causes larger disturbances of silicon crystal structure than irradiation with oxygen ions.