High-temperature processing of crystalline silicon thin-film solar cells

Citation
S. Reber et W. Wettling, High-temperature processing of crystalline silicon thin-film solar cells, APPL PHYS A, 69(2), 1999, pp. 215-220
Citations number
34
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
ISSN journal
09478396 → ACNP
Volume
69
Issue
2
Year of publication
1999
Pages
215 - 220
Database
ISI
SICI code
0947-8396(199908)69:2<215:HPOCST>2.0.ZU;2-3
Abstract
The crystalline silicon thin-film solar cell combines, in principle, the ad vantages of crystalline silicon wafer-based solar cells and of thin-film so lar cell technologies. Its efficiency potential is the highest of all thin- film cells. In the "high-temperature approach" thin silicon layers are depo sited on substrates that withstand processing temperatures higher than 1000 degrees C. The basic features of the high-temperature crystalline silicon thin-film cell technology are described and some important results are disc ussed.