Synthesis of carbon nitride films by low-power inductively coupled plasma-activated transport reactions from a solid carbon source

Thin films of carbon nitride were prepared by low-power inductively coupled plasma chemical vapor deposition from a solid carbon source by utilizing t ransport reactions. The maximum deposition rate achieved was 10 nm/min and depended mainly on the substrate position in the reactor. The nitrogen frac tion in the films was not so sensitive to the process parameters and was at about 0.5 for all experiments as measured by Auger electron spectroscopy ( AES) and elastic recoil detection (ERD) analysis. The chemical bonding stru cture studied by Fourier transform infrared (FTIR) spectroscopy and X-ray p hotoelectron spectroscopy (XPS) showed the presence of triple, double and s ingle bonds between carbon and nitrogen atoms.