The dual wavelength Bi-vertical cavity surface-emitting laser

Citation
Jf. Carlin et al., The dual wavelength Bi-vertical cavity surface-emitting laser, APPL PHYS L, 75(7), 1999, pp. 908-910
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
7
Year of publication
1999
Pages
908 - 910
Database
ISI
SICI code
0003-6951(19990816)75:7<908:TDWBCS>2.0.ZU;2-Y
Abstract
We present a monolithically integrated vertical coupled cavity surface-emit ting laser diode which exhibits stable laser emission at two design wavelen gths simultaneously. The device consists of two slightly asymmetric coupled vertical cavities containing strained InGaAs quantum wells as the gain med ia. The shorter cavity is pumped electrically. Lasing starts on the short w avelength mode at 927 nm. The laser emission then acts as an optical pump f or the quantum wells in the longer cavity and provides additional gain for the long wavelength mode, resulting in a subsequent laser emission at 955 n m. With increasing injection current, the device maintains stable emission at the two wavelengths. The threshold for dual lasing is 4 kA/cm(2) and dua l lasing is stable over six times the threshold. (C) 1999 American Institut e of Physics. [S0003-6951(99)02932-0].