We present a monolithically integrated vertical coupled cavity surface-emit
ting laser diode which exhibits stable laser emission at two design wavelen
gths simultaneously. The device consists of two slightly asymmetric coupled
vertical cavities containing strained InGaAs quantum wells as the gain med
ia. The shorter cavity is pumped electrically. Lasing starts on the short w
avelength mode at 927 nm. The laser emission then acts as an optical pump f
or the quantum wells in the longer cavity and provides additional gain for
the long wavelength mode, resulting in a subsequent laser emission at 955 n
m. With increasing injection current, the device maintains stable emission
at the two wavelengths. The threshold for dual lasing is 4 kA/cm(2) and dua
l lasing is stable over six times the threshold. (C) 1999 American Institut
e of Physics. [S0003-6951(99)02932-0].