Measurement of mechanical resonance and losses in nanometer scale silicon wires

Citation
Dw. Carr et al., Measurement of mechanical resonance and losses in nanometer scale silicon wires, APPL PHYS L, 75(7), 1999, pp. 920-922
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
7
Year of publication
1999
Pages
920 - 922
Database
ISI
SICI code
0003-6951(19990816)75:7<920:MOMRAL>2.0.ZU;2-W
Abstract
We present data on nanofabricated suspended silicon wires driven at resonan ce. The wires are electrostatically driven and detected optically. We have observed wires with widths as small as 45 nm and resonant frequencies as hi gh as 380 MHz. We see a strong dependence of the resonant quality factor on the surface to volume ratio. (C) 1999 American Institute of Physics. [S000 3-6951(99)00633-6].