Blue light-emitting quantum wire structures fabricated by molecular-beam ep
itaxial growth on submicrometer prepatterned GaAs substrates were investiga
ted by spatially and time resolved luminescence experiments. The quantum wi
res are formed due to the different growth rates of ZnCdSe on the (111) and
(100) surfaces of the grated substrate. With decreasing wire width, the ex
citon luminescence splits into two clearly distinguished lines. These lines
can be assigned to the emission of the ridge quantum wire and the emission
of ZnCdSe quantum wells at the bottom of the grooves. The two-dimensional
quantum confinement in the ridge wire is confirmed by a maximum of the deca
y time at the energy of the ridge luminescence. (C) 1999 American Institute
of Physics. [S0003-6951(99)02933-2].