Luminescence of ZnCdSe/ZnSe ridge quantum wires

Citation
W. Heiss et al., Luminescence of ZnCdSe/ZnSe ridge quantum wires, APPL PHYS L, 75(7), 1999, pp. 974-976
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
7
Year of publication
1999
Pages
974 - 976
Database
ISI
SICI code
0003-6951(19990816)75:7<974:LOZRQW>2.0.ZU;2-Q
Abstract
Blue light-emitting quantum wire structures fabricated by molecular-beam ep itaxial growth on submicrometer prepatterned GaAs substrates were investiga ted by spatially and time resolved luminescence experiments. The quantum wi res are formed due to the different growth rates of ZnCdSe on the (111) and (100) surfaces of the grated substrate. With decreasing wire width, the ex citon luminescence splits into two clearly distinguished lines. These lines can be assigned to the emission of the ridge quantum wire and the emission of ZnCdSe quantum wells at the bottom of the grooves. The two-dimensional quantum confinement in the ridge wire is confirmed by a maximum of the deca y time at the energy of the ridge luminescence. (C) 1999 American Institute of Physics. [S0003-6951(99)02933-2].