ZnO/Mg0.2Zn0.8O superlattices with a band-gap offset of about 0.5 eV were e
pitaxially grown by laser molecular-beam epitaxy on a sapphire(0001) substr
ate using a ZnO buffer layer. The superlattice structure with a period rang
ing from 8 to 18 nm was clearly verified by cross-sectional transmission el
ectron microscopy, Auger depth profile, and x-ray diffraction. As the well
layer thickness decreased below 5 nm, the photoluminescence peak and absorp
tion edge in the photoluminescence excitation spectra showed a blueshift, i
ndicating a quantum-size effect. (C) 1999 American Institute of Physics. [S
0003-6951(99)04033-4].