Citation
J. Thiesen et al., Growth of epitaxial silicon at low temperatures using hot-wire chemical vapor deposition, APPL PHYS L, 75(7), 1999, pp. 992-994
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951
→ ACNP
Volume
75
Issue
7
Year of publication
1999
Pages
992 - 994
Database
ISI
SICI code
0003-6951(19990816)75:7<992:GOESAL>2.0.ZU;2-K
Abstract
We demonstrate epitaxial silicon growth of 8 A/s at temperatures as low as
195 degrees C, using hot-wire chemical vapor deposition. Characterization b
y transmission electron microscopy shows epitaxial layers of Si. We briefly
discuss various aspects of the process parameter space. Finally, we consid
er differences in the chemical kinetics of this process when compared to ot
her epitaxial deposition techniques. (C) 1999 American Institute of Physics
. [S0003-6951(99)04233-3].