Low-voltage 0.1 mu m organic transistors and complementary inverter circuits fabricated with a low-cost form of near-field photolithography

Citation
Ja. Rogers et al., Low-voltage 0.1 mu m organic transistors and complementary inverter circuits fabricated with a low-cost form of near-field photolithography, APPL PHYS L, 75(7), 1999, pp. 1010-1012
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
7
Year of publication
1999
Pages
1010 - 1012
Database
ISI
SICI code
0003-6951(19990816)75:7<1010:L0MMOT>2.0.ZU;2-I
Abstract
This letter describes the combined use of a form of near-field photolithogr aphy that relies on a conformable phase masks with microcontact printing an d shadow masking for low-cost fabrication of organic transistors and simple complementary inverter circuits with critical dimensions of similar to 0.1 mu m. The good performance of the devices and their low-voltage operation make them and the fabrication procedures potentially attractive for many ap plications. (C) 1999 American Institute of Physics. [S0003-6951(99)00833-5] .