Size dependence of transverse mode structure in oxide-confined vertical-cavity laser diodes

Citation
Sp. Hegarty et al., Size dependence of transverse mode structure in oxide-confined vertical-cavity laser diodes, APPL PHYS L, 73(5), 1999, pp. 596-598
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
73
Issue
5
Year of publication
1999
Pages
596 - 598
Database
ISI
SICI code
0003-6951(19990803)73:5<596:SDOTMS>2.0.ZU;2-9
Abstract
We analyze the transverse mode structure of selectively oxidized vertical-c avity surface-emitting semiconductor lasers as a function of the aperture s ize and injection current. Measurements of the spectral splittings, the nea r and far field sizes and the response to pulsed operation demonstrate that a parasitic thermal lens can be a dominant factor in determining the trans verse resonator properties of small (<3 mu m) lasers. (C) 1998 American Ins titute of Physics. [S0003-6951(98)04831-1].