Infrared study of light-induced reactivation of neutralized dopants in hydrogenated n-type GaAs doped with silicon

Effects of light-induced reactivation of neutralized dopants in hydrogenate d n-type silicon-doped GaAs epilayers have been investigated using infrared spectroscopy and electrical measurements as well. Photoexcitation of the p assivated material has been performed over a wide wavelength domain (250 nm -1.06 mu m), and the samples have been analyzed by using extensively both s pecular reflection and transmission infrared techniques. In all cases, the observed structural modifications have been correlated to the electrical pr operties evaluated by measuring sheet resistance of the material. The obtai ned experimental data permit a simplified analysis of the dissociation of d opant-hydrogen complexes versus the photon energy of the incident light. (C ) 1998 American Institute of Physics. [S0003-6951(98)01531-9].