Chemical kinetics of mobile-proton generation and annihilation in SiO2 thin films

The chemical kinetics of mobile-proton reactions in the SiO2 film of Si/SiO 2/Si structures were analyzed as a function of forming-gas anneal parameter s in the 300-600 degrees C temperature range. Our data show that the initia l buildup of mobile protons is limited by the rate of lateral hydrogen diff usion into the SiO2 films. The final density of mobile protons is determine d by the cooling rate which terminates the annealing process and, in the ca se of subsequent anneals, by the temperature of the final anneal. To explai n the observations, we propose a dynamical equilibrium model which assumes a reversible interfacial reaction with a temperature-dependent balance. (C) 1998 American Institute of Physics. [S0003-6951(98)02830-7].