Transmission electron microscopy study of Si nanowires

Authors
Zhou, GW Zhang, Z Bai, ZG Feng, SQ Yu, DP
Citation
Gw. Zhou et al., Transmission electron microscopy study of Si nanowires, APPL PHYS L, 73(5), 1999, pp. 677-679
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
73
Issue
5
Year of publication
1999
Pages
677 - 679
Database
ISI
SICI code
0003-6951(19990803)73:5<677:TEMSOS>2.0.ZU;2-C
Abstract
Microstructures of Si nanowires (SiNW's) synthesized using laser ablation w ere investigated by transmission electron microscopy. The SiNW's have a hig h density of structural defects, which may play an important role in the fo rmation of SiNW's and in the determination of the morphology of the nanowir es. A model for the growth mechanism of the SiNW's was discussed on the bas is of the observation. (C) 1998 American Institute of Physics. [S0003-6951( 98)00527-0].