Submillimeter-band high-power generation using multilayered Josephson junctions

Citation
Av. Ustinov et S. Sakai, Submillimeter-band high-power generation using multilayered Josephson junctions, APPL PHYS L, 73(5), 1999, pp. 686-688
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
73
Issue
5
Year of publication
1999
Pages
686 - 688
Database
ISI
SICI code
0003-6951(19990803)73:5<686:SHGUMJ>2.0.ZU;2-V
Abstract
We report on numerical simulations of 10- and 19-layer stacked Josephson ju nctions. Simulations are performed using the experimentally feasible parame ters for Nb/Al-AlOx/Nb junctions. With an appropriate choice of parameters such as magnetic field and coupling, the current-voltage curves of N-layer stacks systematically indicate in-phase locking among the inner N-2 junctio ns. The simulation results suggest that multilayer Josephson junctions are very promising as submillimeter-band high-power oscillators. (C) 1998 Ameri can Institute of Physics. [S0003-6951(98)02430-9].