Asymptotic diffuse X-ray scattering by silicon-doped GaAs single crystals

Structure defects in silicon-doped (at concentrations 1.7 x 10(19) and 4.5 x 10(19) cm(-3)) GaAs single crystals grown by the method of vertical direc tional crystallization have been studied. It is shown that the use of the t riple-crystal X-ray diffractometry in the range of the asymptotic diffuse X -ray scattering provides the information on microdefects of various types, sizes, orientations, and symmetries. The specimens cut out from various par ts of the ingot along the (001) plane showed the presence of interstitial-t ype dislocation loops of various dimensions and amorphous clusters. The ave rage dimensions and concentrations of these defects are determined.