The nucleation effect of CVD diamond by ion bombardment was studied by a tw
o-step process. In the first step, hydrocarbon and hydrogen ion bombardment
was used to induce nucleation on mirror-polished (001) Si substrates. In t
he second step, diamond films were subsequently deposited on the ion-bombar
ded substrates by a conventional hot filament chemical vapor deposition. It
was found that after the ion bombardment, an amorphous layer embedded with
nano-crystalline diamond particles formed on the Si substrate. These nano-
crystalline diamond particles were proposed to serve as the nucleation cent
ers for the growth in the second step. The nucleation density depended stro
ngly on the ion dosage and a nucleation density of up to 2 x 10(9) cm(-2) c
ould be achieved under optimized conditions. (C) 1999 Elsevier Science S.A.
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