The effect of ion bombardment on the nucleation of CVD diamond

Citation
Xs. Sun et al., The effect of ion bombardment on the nucleation of CVD diamond, DIAM RELAT, 8(8-9), 1999, pp. 1414-1417
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
8
Issue
8-9
Year of publication
1999
Pages
1414 - 1417
Database
ISI
SICI code
0925-9635(199908)8:8-9<1414:TEOIBO>2.0.ZU;2-6
Abstract
The nucleation effect of CVD diamond by ion bombardment was studied by a tw o-step process. In the first step, hydrocarbon and hydrogen ion bombardment was used to induce nucleation on mirror-polished (001) Si substrates. In t he second step, diamond films were subsequently deposited on the ion-bombar ded substrates by a conventional hot filament chemical vapor deposition. It was found that after the ion bombardment, an amorphous layer embedded with nano-crystalline diamond particles formed on the Si substrate. These nano- crystalline diamond particles were proposed to serve as the nucleation cent ers for the growth in the second step. The nucleation density depended stro ngly on the ion dosage and a nucleation density of up to 2 x 10(9) cm(-2) c ould be achieved under optimized conditions. (C) 1999 Elsevier Science S.A. All rights reserved.