New infrared absorption centres in electron irradiated and annealed type Ia diamonds

Citation
I. Kiflawi et al., New infrared absorption centres in electron irradiated and annealed type Ia diamonds, DIAM RELAT, 8(8-9), 1999, pp. 1576-1580
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
8
Issue
8-9
Year of publication
1999
Pages
1576 - 1580
Database
ISI
SICI code
0925-9635(199908)8:8-9<1576:NIACIE>2.0.ZU;2-Y
Abstract
New absorption centres having zero phonon lines at 2678 (332 meV), 2913.6 ( 361 meV), 4392.9 (544 meV) and 4442.2 cm(-1) (550 meV) have been produced i n heavily electron-irradiated and annealed type Ia diamonds. Their temperat ure dependence and annealing behaviour have been investigated along with th e effect of the radiation dose and isotopic shifts caused by the substituti on of N-15 and C-13 for N-14 and C-12, respectively. The results are consis tent with the centres being caused by electronic transitions. (C) 1999 Publ ished by Elsevier Science S.A. All rights reserved.