The location of the hydrogen prevalent in chemical vapor deposition (CVD) d
iamond has long been of much interest, not least because of the information
it reveals about the H-driven growth mechanism. We have used micro-scannin
g elastic recoil detection analysis to map the hydrogen distribution in thr
ee dimensions in polycrystalline CVD diamond. The interface between two CVD
layers, one grown with, and one grown without oxygen in the growth mixture
has been studied for its hydrogen concentration. An upper limit on bulk hy
drogen concentration has been determined. The possibility of hydrogen trapp
ing in the bulk is also discussed. (C) 1999 Elsevier Science S.A. All right
s reserved.