The distribution of hydrogen in polycrystalline CVD diamond

Citation
Rd. Maclear et al., The distribution of hydrogen in polycrystalline CVD diamond, DIAM RELAT, 8(8-9), 1999, pp. 1615-1619
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
8
Issue
8-9
Year of publication
1999
Pages
1615 - 1619
Database
ISI
SICI code
0925-9635(199908)8:8-9<1615:TDOHIP>2.0.ZU;2-#
Abstract
The location of the hydrogen prevalent in chemical vapor deposition (CVD) d iamond has long been of much interest, not least because of the information it reveals about the H-driven growth mechanism. We have used micro-scannin g elastic recoil detection analysis to map the hydrogen distribution in thr ee dimensions in polycrystalline CVD diamond. The interface between two CVD layers, one grown with, and one grown without oxygen in the growth mixture has been studied for its hydrogen concentration. An upper limit on bulk hy drogen concentration has been determined. The possibility of hydrogen trapp ing in the bulk is also discussed. (C) 1999 Elsevier Science S.A. All right s reserved.