Ion implantation and annealing of diamond studied by emission channeling and cathodoluminescence

We review emission channeling (EC) studies to determine the lattice sites o f radioactive impurities in IIa diamond after low dose room temperature imp lantation and subsequent annealing. The recovery of implantation damage was studied after implantation of In-111 and As-73. Two distinct annealing sta ges, one in the temperature interval 300-600 K and the other at 1200 K were observed. The lattice sites of the potential donor Li-8, P-33 and As-73 at oms were studied. Li occupies mainly tetrahedral interstitials sites, howev er, a smaller substitutional fraction is presumably due to replacement coll isions occurring during implantation. Significant Li diffusion does not tak e place up to 900 K. EC measurements reveal high substitutional fractions f or P and As of 70(10)% and 55(5)%, respectively. Complementary to the EC st udies, cathodoluminescence (CL) studies of the optical properties of implan ted diamond are especially suited to determine the electrical activation of implanted impurities. This is demonstrated with CL measurements of B and P implanted diamond. Finally, the feasibility of EC studies using the potent ial donor atoms Na, S, and Se is discussed. (C) 1999 Elsevier Science S.A. All rights reserved.