Formation and characterization of graphitized layers in ion-implanted diamond

Due to the metastability of diamond, it tends to transform to graphite if t he lattice damage density exceeds a critical value. Optical and electrical measurements on the diamond structures comprising ion-implantation-induced buried graphitized layers were performed. The parameters of the layers were found to be close to those of dispersed graphite. Raman spectra indicated the presence of considerable tension in the part of the crystal close to th e boundaries of the layers. Cathodoluminescence analysis of implanted diamo nd samples gave evidence of vacancy migration over macroscopic distances (s imilar to 100 mu m). (C) 1999 Elsevier Science S.A. All rights reserved.