F. Fendrych et al., Cu3N films prepared by the low-pressure r.f. supersonic plasma jet reactor: Structure and optical properties, DIAM RELAT, 8(8-9), 1999, pp. 1715-1719
A low-pressure r.f. supersonic plasma jet reactor (RPJ) has been used for d
eposition of Cu3N thin films. From a comparison of experimental values of c
omposition weight per cent with the theoretically predicted values, it foll
ows that if the r.f. power absorbed in the reactor does not exceed 75 W, st
oichiometric Cu3N films can be obtained. The typical value of the depositio
n growth rate was found to be in the order of 16 nm min(-1) for r.f. power
P(w)approximate to 40 W. The optical energy gap, E-g, microhardness, H, and
Young's modulus, E, of the deposited Cu3N thin films increase with decreas
ing r.f. power. They are E-g = 1.24 eV, H = 8.8 GPa and E = 146 GPa for the
sample deposited with a r.f. power of 40 W. Deposition of Cu3N thin films
by means of the modificated RPJ reactor (with a multi-jet system) on to int
ernal walls of cavities, holes and on the surface of complex shapes of holl
ow substrates can be useful for surface-treatment technology. (C) 1999 Else
vier Science S.A. All rights reserved.