Growth of epitaxial beta-SiC films on silicon using solid graphite and silicon sources

Epitaxial beta-SiC films have been grown on mirror-polished Si(111) substra tes using bias-assisted hot filament chemical vapor deposition at a substra te temperature of 1000 degrees C. A graphite plate was used as the carbon s ource, and the silicon source came from the silicon substrate itself. The g as phase in the system is hydrogen only. Atomic hydrogen produced by hot fi laments reacted with the graphite to form hydrocarbon radicals, which furth er reacted with the silicon substrate and deposited as beta-SiC. The effect of negative bias applied to the substrate is the key factor for epitaxial growth. Under the growth conditions without the negative bias applied, only polycrystalline beta-SiC was obtained. (C) 1999 Elsevier Science S.A. All rights reserved.