Photoelectrochemical study of electrochemically formed semiconducting yttrium hydride (YH3-x)

Authors
Di Quarto, F Romano, MC Piazza, S Sunseri, C
Citation
F. Di Quarto et al., Photoelectrochemical study of electrochemically formed semiconducting yttrium hydride (YH3-x), ELECTR ACT, 44(23), 1999, pp. 4051-4059
Citations number
17
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
ELECTROCHIMICA ACTA
ISSN journal
00134686 → ACNP
Volume
44
Issue
23
Year of publication
1999
Pages
4051 - 4059
Database
ISI
SICI code
0013-4686(1999)44:23<4051:PSOEFS>2.0.ZU;2-J
Abstract
The first photoelectrochemical study of semiconducting YH3 - x films formed by etching bulk Y metal in 0.5 M H2SO4 solution is reported. The formation of semiconducting hydride having an indirect optical band gap, E-g(opt), o f about 2.35 eV is confirmed by in situ photocurrent spectroscopy. The phot oelectrochemical behaviour of such a phase was investigated both in alkalin e and in acidic solutions. The flat band potential was estimated to be U-fb = - 1.25 V/NHE, independent of pH. (C) 1999 Elsevier Science Ltd. All righ ts reserved.