A new low-bandgap III-V compound grown on GaAs (GaAsSbN) has been investiga
ted. Strained quantum wells were realised by molecular beam epitaxy with a
nitrogen plasma source. The influence of Sb content on the level of nitroge
n incorporation has been examined and no strong dependence was found. This
material offers an interesting alternative to InGaAsN for developing 1.3 an
d 1.55 mu m laser sources on GaAs substrates: a GaAs0.729Sb0.259N0.012/GaAs
quantum well has exhibited a room-temperature photoluminescence peak wavel
ength as long as 1.52 mu m. This emission is shifted to 1.3 mu m after post
-growth annealing.