GaAsSbN: a new low-bandgap material for GaAs substrates

A new low-bandgap III-V compound grown on GaAs (GaAsSbN) has been investiga ted. Strained quantum wells were realised by molecular beam epitaxy with a nitrogen plasma source. The influence of Sb content on the level of nitroge n incorporation has been examined and no strong dependence was found. This material offers an interesting alternative to InGaAsN for developing 1.3 an d 1.55 mu m laser sources on GaAs substrates: a GaAs0.729Sb0.259N0.012/GaAs quantum well has exhibited a room-temperature photoluminescence peak wavel ength as long as 1.52 mu m. This emission is shifted to 1.3 mu m after post -growth annealing.