InGaAs pin detector array integrated with AlGaAs/GaAs grating demultiplexer by total internal reflector

A WDM photodetector array is demonstrated which is realised by the advanced integration of a channel/planar waveguide and a grating demultiplexer by u sing a total internal reflector to couple the optical signal from the waveg uide into the detector array. The device was fabricated using solid source molecular beam epitaxy to grow a multilayer structure that includes a five- layer, low loss (< 1dB/cm), AlGaAs/GaAs waveguide, an InP buffer layer, and an In0.53Ga0.47As pin detector. The channel spacing is 2nm over the 1520-1 550nm wavelength range and the passband of the filter is 1nm at -1dB level.