1.3 mu m continuous-wave operation of GainNAs lasers grown by metal organic chemical vapour deposition

Authors
Sato, S Satoh, S
Citation
S. Sato et S. Satoh, 1.3 mu m continuous-wave operation of GainNAs lasers grown by metal organic chemical vapour deposition, ELECTR LETT, 35(15), 1999, pp. 1251-1252
Citations number
10
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
15
Year of publication
1999
Pages
1251 - 1252
Database
ISI
SICI code
0013-5194(19990722)35:15<1251:1MMCOO>2.0.ZU;2-B
Abstract
1.31 mu m continuous-wave operation of highly strained GaInNAs/GaAs double quantum-well lasers grown by metal organic chemical vapour deposition has b een demonstrated; The threshold current and threshold current density of th e 700 mu m long laser at 20 degrees C were 63mA and 1.2kA/cm(2), respective ly. These are the lowest values ever reported for 1.3 mu m GaInNAs/GaAs las ers under continuouswave operation. Characteristic temperatures as high as 128K were observed under continuous-wave operation.