Mid-IR (3.8-3.9 mu m) interband cascade lasers based on InAs/GaInSb heteros
tructures have been demonstrated at temperatures up to 210K. The authors ha
ve observed a peak optical output power of similar to 2W/facet from one dev
ice at 80K, and from another device at 150K, a slope of 735mW/A per facet,
corresponding to a differential external quantum efficiency of 456%.