High-power interband cascade lasers with quantum efficiency > 450%

Authors
Yang, RQ Bruno, JD Bradshaw, JL Pham, JT Wortman, DE
Citation
Rq. Yang et al., High-power interband cascade lasers with quantum efficiency > 450%, ELECTR LETT, 35(15), 1999, pp. 1254-1255
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
15
Year of publication
1999
Pages
1254 - 1255
Database
ISI
SICI code
0013-5194(19990722)35:15<1254:HICLWQ>2.0.ZU;2-A
Abstract
Mid-IR (3.8-3.9 mu m) interband cascade lasers based on InAs/GaInSb heteros tructures have been demonstrated at temperatures up to 210K. The authors ha ve observed a peak optical output power of similar to 2W/facet from one dev ice at 80K, and from another device at 150K, a slope of 735mW/A per facet, corresponding to a differential external quantum efficiency of 456%.