Aluminium passivation for TMAH based anisotropic etching for MEMS applications

Authors
Lian, K Stark, B Gundlach, AM Walton, AJ
Citation
K. Lian et al., Aluminium passivation for TMAH based anisotropic etching for MEMS applications, ELECTR LETT, 35(15), 1999, pp. 1266-1267
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
15
Year of publication
1999
Pages
1266 - 1267
Database
ISI
SICI code
0013-5194(19990722)35:15<1266:APFTBA>2.0.ZU;2-X
Abstract
The addition of water glass (64 gSiO(2)/l) and ammonium persulfate (5g/l) t o TMAH (5wt%) for silicon anisotropic etching has been shown to passivate a luminium in the same manner as solid silicon or silicic acid. Ih of etching results in an Si (1, 0, 0) etch rate of 1.1 mu m/min, and a surface roughn ess of < 100nm, making it suitable for MEMS applications.