The design, fabrication, and measurement of an a-Si/SiO2 photonic crystal p
olarisation splitter are reported. The device consists of a 10-period corru
gated multilayer film and is made by a combination of sputter-deposition an
d sputter-etching processes. The measured insertion loss and extinction rat
io at lambda = 1.55 mu m are 0.4dB and > 40dB, respectively.