Characteristics of SiC-based thin-film LED fabricated using plasma-enhanced CVD system with stainless steel mesh

Authors
Chen, YA Hsu, ML Laih, LH Hong, JW Chang, CY
Citation
Ya. Chen et al., Characteristics of SiC-based thin-film LED fabricated using plasma-enhanced CVD system with stainless steel mesh, ELECTR LETT, 35(15), 1999, pp. 1274-1275
Citations number
9
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
15
Year of publication
1999
Pages
1274 - 1275
Database
ISI
SICI code
0013-5194(19990722)35:15<1274:COSTLF>2.0.ZU;2-W
Abstract
A conventional plasma-enhanced chemical vapour deposition (PECVD) system wi th a stainless steel mesh attached to a cathode was used to fabricate an Si C-based thin-mm light-emitting diode (TFLED) at a low temperature (similar to 180 degrees C). The obtained TFLED had a brightness (B) of 1060cd/m(2) a t an injection current density (J) of 600mA/cm(2) and a threshold voltage ( V-th) of 12.6V, which were much better than those of 330cd/m(2) and 18.5V f or an amorphous SiC-based TFLED fabricated by the same PECVD system without a stainless steel mesh.