Ohmic contact to p-ZnSe and p-ZnMgSSe

Authors
Chang, SJ Chen, WR Su, YK Tu, RC Lan, WH Chang, H
Citation
Sj. Chang et al., Ohmic contact to p-ZnSe and p-ZnMgSSe, ELECTR LETT, 35(15), 1999, pp. 1280-1281
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
15
Year of publication
1999
Pages
1280 - 1281
Database
ISI
SICI code
0013-5194(19990722)35:15<1280:OCTPAP>2.0.ZU;2-C
Abstract
The authors have deposited Ge/Cu onto p-ZnSe epitaxial layers, and found th at the specific contact resistance is 2 x 10(-4)Omega cm(2) after a simple voltage stress. The authors have also deposited Ge3Cu/pt/Au onto p-ZnSe and p-ZnMgSSe, and found that the specific contact resistance is 8 x 10(-5) Om ega cm(2) and 3.8 x 10(-5) Omega cm(2) for the as-deposited Cu3Ge/Pt/Au con tacts on top of the p-ZnSe and pZnMgSSe, respectively. It was also found th at the Cu3Ge/Pt/Au on p-ZnSe is much more stable than the Cu3Ge/Pt/Au on p- ZnMgSSe.