SOL thickness dependence of residual strain in SOI material

Authors
Camassel, J Planes, N Falkovsky, L Moller, H Eickhoff, M Krotz, G
Citation
J. Camassel et al., SOL thickness dependence of residual strain in SOI material, ELECTR LETT, 35(15), 1999, pp. 1284-1286
Citations number
9
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
15
Year of publication
1999
Pages
1284 - 1286
Database
ISI
SICI code
0013-5194(19990722)35:15<1284:STDORS>2.0.ZU;2-K
Abstract
The structural properties of commercial SOI (silicon on insulator) wafers h ave been investigated against SOL (silicon over-layer) thickness. It is fou nd that the upper part of a standard SOI material constantly exhibits a rat her large amount of residual stress. It is shown that the repartitions of r esidual stresses depend on the final SOL thickness.