D. Brinkmann et al., Interaction-assisted propagation of Coulomb-correlated electron-hole pairsin disordered semiconductors, EUR PHY J B, 10(1), 1999, pp. 145-148
A two-band model of a disordered semiconductor is used to analyze dynamical
interaction induced weakening of localization in a system that is accessib
le to experimental verification. The results show a dependence on the sign
of the two-particle interaction and on the optical excitation energy of the
Coulomb-correlated electron-hole pair.