Interaction-assisted propagation of Coulomb-correlated electron-hole pairsin disordered semiconductors

Citation
D. Brinkmann et al., Interaction-assisted propagation of Coulomb-correlated electron-hole pairsin disordered semiconductors, EUR PHY J B, 10(1), 1999, pp. 145-148
Citations number
27
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
EUROPEAN PHYSICAL JOURNAL B
ISSN journal
14346028 → ACNP
Volume
10
Issue
1
Year of publication
1999
Pages
145 - 148
Database
ISI
SICI code
1434-6028(199907)10:1<145:IPOCEP>2.0.ZU;2-Q
Abstract
A two-band model of a disordered semiconductor is used to analyze dynamical interaction induced weakening of localization in a system that is accessib le to experimental verification. The results show a dependence on the sign of the two-particle interaction and on the optical excitation energy of the Coulomb-correlated electron-hole pair.