T. Easwarakhanthan et P. Alnot, Simultaneous measurement of film and substrate optical parameters from multiple sample single wavelength ellipsometric data, EPJ-APPL PH, 6(3), 1999, pp. 285-292
A procedure has been developed for the accurate measurement of film and sub
strate optical parameters from the multiple sample single-wavelength ellips
ometric data. The dimensional reduction of the unknowns from newly formulat
ed ellipsometric functions, the root selection and the thickness-dependent
integer deduction enhance the rapidity of finding solutions and the converg
ence from a wide range of initial guesses while avoiding undesirable soluti
ons. An error analysis carried out shows that the procedure is very resista
nt to the propagation of angular errors and allows the estimation of optimu
m film thickness ranges under which the parameters can be accurately found.
The standard SiO2/Si structure is particularly studied using the procedure
that is further illustrated with the experimental data on Ni/BK7-glass str
uctures. The SiO2 film refractive index and thickness are thus shown to be
accurately determined when sought along with the substrate optical constant
s. Moreover, the film and substrate real indexes are not altered in the pre
sence of an interface layer between the film and the substrate while its ex
istence is indicated by a systematic lowering of the Si substrate extinctio
n coefficient. The procedure can be efficiently used in the continuous real
-time optical characterization of films growing on substrates.