Surface passivation of composition graded base in GaAlAs/GaInP/GaAs heterojunction bipolar transistor

Authors
Bourguiga, R Sik, H Scavennec, A
Citation
R. Bourguiga et al., Surface passivation of composition graded base in GaAlAs/GaInP/GaAs heterojunction bipolar transistor, EPJ-APPL PH, 6(3), 1999, pp. 299-301
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
ISSN journal
12860042 → ACNP
Volume
6
Issue
3
Year of publication
1999
Pages
299 - 301
Database
ISI
SICI code
1286-0042(199906)6:3<299:SPOCGB>2.0.ZU;2-5
Abstract
A comparative study on the emitter-base recombination current in different GaAlAs/GaInP/GaAs HBT structures including uniform base HBTs, and compositi on graded base HBTs, has been carried out. We have demonstrated that a grad ed base is not sufficient to prevent recombination on the base surface and that a thin GaInP ledge on the base surface remains necessary to retain a h igh enough current gain for small emitter high-frequency devices.