Light-emitting diodes with 17% external quantum efficiency at 622 Mb/s forhigh-bandwidth parallel short-distance optical interconnects

Citation
Rh. Windisch et al., Light-emitting diodes with 17% external quantum efficiency at 622 Mb/s forhigh-bandwidth parallel short-distance optical interconnects, IEEE S T QU, 5(2), 1999, pp. 166-171
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
ISSN journal
1077260X → ACNP
Volume
5
Issue
2
Year of publication
1999
Pages
166 - 171
Database
ISI
SICI code
1077-260X(199903/04)5:2<166:LDW1EQ>2.0.ZU;2-V
Abstract
We report on nonresonant cavity light-emitting diodes (NRC-LED) with large quantum efficiencies and high speed. A maximum quantum efficiency of 31% is measured for a device with an active layer thickness of 120 nm, and 18.7% for a device having an active layer of 30 nm, Further, we report on optical rise and fall times of NRC-LED's. Even when switched to current levels bel ow 4 mA, at which the external quantum efficiency exceeds 17%, our NRC-LED' S have 10%-90% rise and fall times of less than 2 ns, As a result, eye diag rams taken at this current level at 622 Mb/s are wide open. This demonstrat es the suitability of high-efficiency NRC-LED's for optical interconnects, Finally, from a system's viewpoint it is important to note that the optical output power of NRC-LED's decreases by only 0.36%/degrees C.