Hybrid integration of VCSEL's to CMOS integrated circuits

Three hybrid integration techniques for bonding vertical-cavity surface-emi tting lasers (VCSEL's) to CMOS integrated circuit chips have been developed and compared in order to determine the optimum method of fabricating VCSEL based smart pixels for optical interconnects and free-space optical proces sing. Each of the three bonding techniques used different ways of attaching the VCSEL to the integrated circuit and making electrical contacts to the n- and p-mirrors, All three techniques remove the substrate from the VCSEL wafer leaving an array of individual VCSEL's bonded to individual pixels. T he 4 x 4 and/or 8 x 8 arrays of bonded VCSEL's produced electrical and opti cal characteristics typical of unbonded VCSEL's, Threshold voltages down to 1.5 V and dynamic resistance as low as 30 Ohm mere measured, indicating go od electrical contact was obtained. Optical power as high as similar to 10 mW for a VCSEL with a 20-mu m aperture and 0.7 mW with a 6-mu m aperture me re observed. The VCSEL's were operated at 200 Mb/s (our equipment limit) wi th the rise and fall times of the optical output <1 nS.