Realization and characterization of 8 x 8 resonant cavity LED arrays mounted onto CMOS drivers for POF-based interchip interconnections

Citation
R. Bockstaele et al., Realization and characterization of 8 x 8 resonant cavity LED arrays mounted onto CMOS drivers for POF-based interchip interconnections, IEEE S T QU, 5(2), 1999, pp. 224-235
Citations number
37
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
ISSN journal
1077260X → ACNP
Volume
5
Issue
2
Year of publication
1999
Pages
224 - 235
Database
ISI
SICI code
1077-260X(199903/04)5:2<224:RACO8X>2.0.ZU;2-K
Abstract
An 8 x 8 array of resonant-cavity light-emitting diodes (RCLED's) emitting at 980 nm and flip-chip mounted onto complimentary metal-oxide-semiconducto r (CMOS) integrated drivers, is presented. The RCLED's are optimized for ma ximal extraction efficiency into the numerical aperture of polymer optical fibers (N A = 0.5) and minimal optical crosstalk, Design of the optimal cav ity structure is presented, and 8 x 8 arrays are realized and mounted direc tly onto standard CMOS chips using a solder reflow technique. The CMOS inte grated drivers are designed for high-speed operation and low-power consumpt ion, and are realized in 0.8 and 0.6-mu m CMOS technology. The electrooptic al modules have been realized and characterized, and over 50-mu W optical p ower coupled to POF at 3-mA drive current is reported. Open eye diagrams at operation speed up to 250 Mb/s are presented. These characteristics are co mpatible with CMOS integrated low-power receivers.