The unshunted (un) SQUID isa two-junction device whose Josephson junctions
are damped at high frequencies only. Single-valued rather than hysteretic b
ehaviour on the negative resistance region is obtained by using a voltage b
ias rather than a current bias. We have studied numerically the noise prope
rties of the un SQUID with a double-loop (dl) washer configuration, in whic
h the SQUID inductance is capacively split into two loops. Our simulations
with beta(c) = 0.7 and beta(l) = 0.5 - 3 suggest that noise level in the un
dl SQUID depends more weakly on the device parameters than in the un SQUID
. The best energy resolution obtained in the smooth area of the IV curves i
s epsilon approximate to 5k(B)T root LC but in narrow pockets in the non-sm
ooth region epsilon approximate to 3k(B)T root LC is approached.