I-V characteristic of a single intrinsic tunnel junction on Bi-2223 thin film

We report the successful fabrication of a single intrinsic Josephson juncti on on a (Bi,Pb)-Sr-Ca-Cu-O thin film and investigate the current-voltage ch aracteristics. Mesa structures are fabricated on the smooth surface of a hi gh-quality thin film. The current-voltage characteristic along the c-axis s hows a large distinct hysteresis and the superconducting Sap edge structure . The estimated gap is about 75 mV at 4.2 It and is comparable with results of scanning tunneling spectroscopy. The obtained current-voltage curve is explained quite well by assuming d-wave symmetry for the superconducting or der parameter neglecting nonequilibrium effects. We have observed voltage s teps in the current-voltage characteristic induced by microwave irradiation . The voltage step shifts to higher voltages with increasing irradiation po wer. It is proposed that this behavior is caused by fluxon motion.