Fabrication technology for high-density Josephson integrated circuits using mechanical polishing planarization

Citation
H. Numata et al., Fabrication technology for high-density Josephson integrated circuits using mechanical polishing planarization, IEEE APPL S, 9(2), 1999, pp. 3198-3201
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
ISSN journal
10518223 → ACNP
Volume
9
Issue
2
Year of publication
1999
Part
3
Pages
3198 - 3201
Database
ISI
SICI code
1051-8223(199906)9:2<3198:FTFHJI>2.0.ZU;2-N
Abstract
A mechanical polishing planarization (MPP) process is developed with an end point detection method. h-IPP makes it possible to form self-aligned contac ts on small junctions and to decrease parasitic inductance. It can also con trol the thickness of the insulation layers precisely. MPP was used to fabr icate a 22 mu m x 22 mu m vortex transitional memory cell and the cell oper ated correctly. The reliability of interlayer insulation was increased for 61-Kbit memory cell arrays fabricated using MPP. It is concluded that MPP i s an effective technology for fabricating high-density Josephson circuits.