I. Wooldridge et al., Electrical tuning of passive HTS microwave devices using single crystal strontium titanate, IEEE APPL S, 9(2), 1999, pp. 3220-3223
Over the last few years several groups have fabricated High Temperature Sup
erconducting (BTS) thin film microwave devices which have included a ferroe
lectric thin film layer in their design. The electric field dependence of t
he ferroelectric promises desirable in-situ tuning of the frequency respons
e. Here ne present the results of our experiments on the tuning of a coplan
ar HTS resonator using single crystal strontium titanate (STO). We have pat
terned a simple coplanar resonator device onto Y-Ba-Cu-O thin films deposit
ed on (100) magnesium oxide substrates. Careful consideration of the size,
position and biasing of these high permittivity STO crystals with respect t
o the planar device allo,vs us to minimise the perturbance to the plain; re
sonators response,whilst at the same time maximising the degree to which we
are able to tune the device. We have also performed a series of capacitanc
e measurements on our STO crystals to obtain reliable data for the dependen
ce of the permittivity on temperature, applied bias and crystallographic or
ientation.