Characteristics of junctions and resistors fabricated using an All-NbN superconductor integrated circuit foundry process

Trilayer NbN/MgO/NbN tunnel junctions and Mo and NbNx resistors fabricated over a NbN ground plane form the basis of a high performance, 10 K, superco nductor integrated circuit foundry process. To produce high yield LSI and V LSI superconductor integrated circuits requires predictable device characte ristics, stable, well-characterized, thin film deposition processes, and co ntrol of critical dimensions (CD). In this paper, we discuss improvements i n thin film deposition processes, device characteristics, and Co control. R epeatable trilayer characteristics have been achieved through the use of fe edback control of critical MgO and NbN sputtering parameters. Run-to-run va riations in MgO film thickness have been reduced to less than +/-1.0 % (1 s igma) using a novel computer feedback control technique. Improvements in Mg O deposition uniformity and CD control of junction size have reduced across wafer I-c nonuniformity to less than +/-10 % (3 sigma) and 100 junction ar ray I-c nonuniformity on 0.5 cm chips to +/-2 % (1 sigma), We report on the electrical characteristics of junctions and resistors and on component spr eads and stability of our NbN foundry process.