Fabrication and properties of Nd-Ba-Cu-O/Pr-Ba-Cu-O/Nd-Ba-Cu-O ramp-edge junctions

We present recent results on the fabrication process of NdBa2Cu3O7-delta (N BCO) ramp-edge junctions with a PrBa2Cu3O7-delta (PBCO) barrier by pulsed l aser deposition (PLD). We also describe the fabrication of high T-c Superco nductor-Normal metal Superconductor (SNS) junctions in an edge geometry wit h integrated ground planes and insulators. The process incorporates five la yers which includes an integrated high T-c ground plane with a low epsilon( r) interlevel dielectric layer of CeO2 deposited by Metal Organic Chemical Vapour Deposition (MOCVD). We have used YBa2Cu3O7-delta (YBCO) single cryst als as a groundplane. It was confirmed that NBCO layers could be incorporat ed in the multilayer structure without substantial degradation. Process mod ifications necessary to reach our fabrication goals are outlined.